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Silicon carbide Power MOSFET 45 A, 1200 V, 80 mΩ, N-channel in HiP247 package
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This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

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Errata Sheet
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Key Features

  • Very tight variation of on-resistance vs. temperature
  • Slight variation of switching losses vs. temperature
  • Very high operating temperature capability (200 °C)
  • Very fast and robust intrinsic body diode
  • Low capacitance
  • Easy to drive

图案 资源


Technical Documentation

Product Specifications

描述 版本 大小
DS9011: Silicon carbide Power MOSFET: 45 A, 1200 V, 80 mΩ, N-channel in HiP247™ package
7.0 753 KB

Technical Notes & Articles

描述 版本 大小
TA0349: Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs
1.0 1,100 KB

User Manual

描述 版本 大小
UM1575: Spice model tutorial for Power MOSFETs
1.2 1,550 KB

HW Model & CAD Libraries

HW Model & CAD Libraries

描述 版本 大小
SCT30N120 PSpice model
2.0 7 KB

Publications and Collaterals


描述 版本 大小
SiC MOSFET: The real breakthrough in high-voltage switching
1,893 KB

样品 & 购买

产品型号 Marketing StatusPackagePacking TypeAutomotive GradeOrder From STUnit Price (US$)*
@ 1000
Distributor AvailabilityRoHS Compliance GradeDownload
Material Declaration**
SCT30N120ActiveHIP247 IN LINETube_-35Distributor reported inventory date: 2014-12-20
Distributor NameRegionStockMin. order

(*) 建议零售价格仅用于预算,以美元为单位,每。的报价,以当地货币计算的价格,请联系您当地的 ST 销售办事处 或我们的 分销商
(**) 材料声明表格上提供st.com可以是一般的文件,根据最常用的包,包内的家庭。出于这个原因,他们可能不是100%准确,对于一个特定的设备。请联系我们 销售支持 在特定设备上的信息。
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