通常可以根据导通电阻为电源管理设计选择合适的、击穿电压范围为450 ~ 650 V的MOSFET，采用ΩMax247封装的产品的导通电阻低至17 mΩ（650 V）。 这些MOSFET设计用于满足SMPS、UPS、LED照明、PV逆变器、电机控制、焊接和汽车应用的各种要求。
- 为650 V MOSFET实现了单位面积最低的RDS(on)（MDmesh V）
- 广泛的封装选项，包括面向小型设计的SMD PowerFLAT封装
550/650 V MDmesh V power MOSFETs
So you can achieve greater energy savings in power conversion, we have enlarged our product offering of MDmesh V MOSFETs. These MOSFETs enhance on-state resistance per silicon area performance (550 V and 650 V @ 25 °C) and significantly reduce losses in PFC circuits, power supplies and solar inverters. This in turn enables new generations of electronic products with greater energy savings and superior power density. Several packages are available, including the new 4-lead TO247-4 featuring a dedicated control pin for increased switching efficiency, and the 1-mm high surface mount PowerFLAT 8x8 HV featuring an exposed metal drain pad for efficient heat dissipation.
This new technology will help product designers tackle emerging challenges such as the high-efficiency targets of new eco-design directives, and will also benefit the renewable energy sector by saving vital watts normally lost in power-control modules.
MDmesh V MOSFETs achieve up to 40% better RDS(on) versus the previous MDmesh II technology and establish a new milestone in the power switch arena. The MDmesh V portfolio of high-voltage MOSFETs has been recently enlarged with the introduction of the industry’s first 650 V AEC-Q101 qualified devices housed in the popular TO-247 package. They are ideal for hard-switching and high-current topologies in HEVs and EVs.