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STP24N60M2

N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
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These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.

pdf Please read
Errata Sheet
pdf 下载
数据表

Key Features

  • Extremely low gate charge
  • Lower RDS(on)x area vs previous generation
  • Low gate input resistance
  • 100% avalanche tested
  • Zener-protected

图案 资源

顶部

Technical Documentation

Product Specifications

描述 版本 大小
pdf
DS9377: N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages
5.0 1,557 KB

Technical Notes & Articles

描述 版本 大小
pdf
TN1156: Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
1.0 658 KB

User Manual

描述 版本 大小
pdf
UM1575: Spice model tutorial for Power MOSFETs
1.2 1,550 KB

HW Model & CAD Libraries

HW Model & CAD Libraries

描述 版本 大小
zip
STP24N60M2 PSpice model
10 KB

样品 & 购买

顶部
产品型号 Marketing StatusPackagePacking TypeAutomotive GradeOrder From STUnit Price (US$)*
@ 1000
Distributor AvailabilityRoHS Compliance GradeDownload
Material Declaration**
STP24N60M2ActiveTO-220ABTube_Free Samples2.5Distributor reported inventory date: 2014-10-21
Distributor NameRegionStockMin. order
ARROWOrder NowAMERICA10001000
ANGLIA LiveOrder NowEUROPE100050
DIGIKEYOrder NowWORLDWIDE10511
MOUSEROrder NowWORLDWIDE15111
Ecopack2PDF
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(*) 建议零售价格仅用于预算,以美元为单位,每。的报价,以当地货币计算的价格,请联系您当地的 ST 销售办事处 或我们的 分销商
(**) 材料声明表格上提供st.com可以是一般的文件,根据最常用的包,包内的家庭。出于这个原因,他们可能不是100%准确,对于一个特定的设备。请联系我们 销售支持 在特定设备上的信息。
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