ST Life.augmented

N-沟道 (>650V)

意法半导体击穿电压高于650 V的MOSFET采用TO-247封装,提供了低栅极电荷和低至0.690 Ω(1200 V)的低导通电阻。对它们进行了优化,从而满足了SMPS、PV逆变器、三相电源和电机控制应用的各种要求。提供的比电压包括700 V、800 V、850 V、900 V、950 V、1000 V、1200 V和1500 V。


  • 出色的开关性能
  • 额定雪崩电压为1500 V的器件
  • 面向工业应用的全隔离、高爬电TO-3PF

这些MOSFET提供了多种行业标准小型和高散热型封装选项,例如DPAK、IPAK、D2PAK、I2PAK、H2PAK、ISOTOP、PowerFLAT 5x6 VHV、TO-220、SOT-223、TO-247和TO-3PF。

1200 V MDmesh K5 power MOSFETs

ST’s MDmesh K5 series of super-junction MOSFETs has been extended with the introduction of 1200 V devices ensuring a higher safety margin for more robust and reliable applications. Ideal for welding, 3-phase SMPS, solar-micro inverters and lighting applications, they feature the industry’s best figure of merit (FoM) thanks to the low on-resistance (down to 0.69 Ω in the TO-220 package) combined with ultra-low gate charge (44.2 nC).
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