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Automotive-grade 390 V internally clamped IGBT ESCIS 300 mJ
  • active 活性

This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition systems.

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Errata Sheet
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Key Features

  • Designed for automotive applications and AEC-Q101 qualified
  • ESD gate-emitter protection
  • Gate-collector high voltage clamping
  • Logic level gate drive
  • Low saturation voltage
  • High pulsed current capability
  • Gate and gate-emitter resistor

图案 资源


Technical Documentation

Product Specifications

描述 版本 大小
DS9488: Automotive-grade 390 V internally clamped IGBT ESCIS 300 mJ
5.0 1,136 KB

Application Notes

描述 版本 大小
AN1491: IGBT basic
2.4 119 KB
AN484: Car ignition with IGBTs
1.2 216 KB

HW Model & CAD Libraries

HW Model & CAD Libraries

描述 版本 大小
STGD20N40LZ PSpice model
8 KB

Publications and Collaterals

Conference Paper

描述 版本 大小
MOSFETs or IGBTs in the modern ERC and SUSTAIN modules of PDPs? An empirical approach for choosing suitable power switches
1.0.0 692 KB

样品 & 购买

产品型号 Marketing StatusPackagePacking TypeTurn-off switching losses (typ) (@ Tc=125 °C) Total Power Dissipation (max) Automotive GradeOrder From STUnit Price (US$)*
@ 1000
Distributor AvailabilityRoHS Compliance GradeDownload
Material Declaration**
STGD20N40LZActiveDPAKTape And Reel125Yes-.95No availability reported, please contact our Sales officeEcopack1PDF

(*) 建议零售价格仅用于预算,以美元为单位,每。的报价,以当地货币计算的价格,请联系您当地的 ST 销售办事处 或我们的 分销商
(**) 材料声明表格上提供st.com可以是一般的文件,根据最常用的包,包内的家庭。出于这个原因,他们可能不是100%准确,对于一个特定的设备。请联系我们 销售支持 在特定设备上的信息。
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