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900-1300V 绝缘栅双极晶体管(IGBT)

意法半导体’的900~1300V IGBT为工作频率高达100 kHz的应用提供的最大集电极电流范围为3~40A。 提供了多种版本,并且带有专用内置式反向并联二极管以实现设计优化。 利用意法半导体’获得专利的标准冲压穿透PowerMESH技术和新引进的沟槽栅场终止技术来实现该电压范围。

这些900~1300V IGBT的目标应用包括家用电器、感应加热、光伏、UPS、焊接和照明。 提供的封装选项包括D2PAK、DPAK、IPAK、TO-220、TO-220FP、TO-247、TO-247长引线和TO-3P。

1200 V trench-gate field-stop IGBT H series

Leveraging the advanced proprietary trench gate field-stop (TGFS) structure, the new H series of 1200 V IGBTs is optimized for high-speed (> 20 kHz) hard-switching topologies.
Combining a very short tail-current with low turn-off losses and a very-fast turn-on, they enhance the efficiency of high-frequency applications such as UPS, solar inverters and welders. The 1200 V IGBT H series also features a 5 µs min short circuit time at high temperature. The co-packaged freewheeling diode enables very fast recovery whilst maintaining an adequate level of softness, resulting in excellent high-speed switching performance, ruggedness and EMI behavior.
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