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1200W Pulse - 100V HF/VHF DMOS TRANSISTOR in STAC package
  • active 活性

The STAC4932B is an N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications. The STAC4932B benefits from the latest generation of efficient, patent-pending STAC® package technology.

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Errata Sheet
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Key Features

  • Excellent thermal stability
  • Common source push-pull configuration
  • POUT= 1000 W min. (1200 W typ.) with 26 dB gain @ 123 MHz
  • Pulse conditions: 1 msec - 10%
  • In compliance with the 2002/95/EC European directive
  • ST air-cavity STAC® packaging technology

图案 资源


Technical Documentation

Product Specifications

描述 版本 大小
DS6724: HF/VHF/UHF RF power N-channel MOSFET
7.0 503 KB

Application Notes

描述 版本 大小
AN3232: Mounting recommendations for STAC® and STAP® boltdown packages
4.0 1,711 KB
AN4016: 2 kW PPA for ISM applications
1.0 981 KB

HW Model & CAD Libraries

HW Model & CAD Libraries

描述 版本 大小
STAC4932x ADS model
1.0.0 417 KB

Related Tools and Software

Related Tools and Software

产品型号 描述
STEVAL-IMR002V1 2 kW/100 V RF demonstration board for 3 T MRI based on the STAC4932B
STSW-RFMOS001 Mismatch analysis for RF transistor circuits based on Agilent ADS
STSW-RFMOS002 Large signal load stability for RF transistors based on Agilnet ADS

样品 & 购买

产品型号 Marketing StatusPackagePacking TypeAutomotive GradeOrder From STUnit Price (US$)*
@ 1000
Distributor AvailabilityRoHS Compliance GradeDownload
Material Declaration**
STAC4932BActiveSTAC244BLoose Piece_-67.9Distributor reported inventory date: 2016-02-11
Distributor NameRegionStockMin. order

(*) 建议零售价格仅用于预算,以美元为单位,每。的报价,以当地货币计算的价格,请联系您当地的 ST 销售办事处 或我们的 分销商
(**) 材料声明表格上提供st.com可以是一般的文件,根据最常用的包,包内的家庭。出于这个原因,他们可能不是100%准确,对于一个特定的设备。请联系我们 销售支持 在特定设备上的信息。
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