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碳化硅二极管

为了满足严格的最新效率规范(能源之星、80Plus、欧洲能源效率)的要求,电源设计者必须考虑使用新型功率转换器拓扑和效率更高的电子元件,例如高压碳化硅(SiC)肖特基二极管。

意法半导体的SiC二极管利用了碳化硅出色的物理特性,其动态反向恢复特性比硅好4倍、正向导通电压VF比它低15%。

在硬开关应用中,比如高端服务器和通讯电源,SiC肖特基二极管大幅降低了功率损耗,并且得到了广泛使用。它们还越来越多地被应用到太阳能逆变器、电机驱动器、不间断电源(UPS)和电动车(EV)之中。

意法半导体推出了全套SiC二极管,其电压范围为600 ~ 1200 V,包含单、双二极管。这些产品提供多种封装选项,从DPAK到TO-247,让设计者能够灵活提高效率和可靠性,加快产品面市步伐,削减成本。
 

Performance comparison curve between 600 V Si, Ultrafast tandem and Si diodes

ST extends its 650 V new generation SiC diodes with dual-configuration devices

ST’s new 650 V rated silicon-carbide diode range now includes common-cathode or series dual-configuration devices, allowing use in interleaved or bridgeless power-factor correction (PFC) circuits:

- The STPSC8/12/16/20H065C (8, 12,16, 20 A), have a common-cathode configuration, in standard TO-220AB package (and TO-247 for the 20-amp device)
- The STPSC6/8/10TH13TI (6, 8, 10 A), have a series configuration, in insulated TO-220AB package simplifying the heatsink fixing and replacing external isolation

These devices combine SiC performance advantages of higher energy efficiency and ruggedness versus silicon rectifiers, with the space savings and EMI reduction of dual integrated diodes.
They enhance energy efficiency and simplify the design of equipment such as server and telecom power supplies, solar inverters or electric-vehicle charging stations.

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