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碳化硅二极管

为了满足严格的最新效率规范(能源之星、80Plus、欧洲能源效率)的要求,电源设计者必须考虑使用新型功率转换器拓扑和效率更高的电子元件,例如高压碳化硅(SiC)肖特基二极管。
意法半导体的SiC二极管利用了碳化硅出色的物理特性,其动态反向恢复特性比硅好4倍、正向导通电压VF比它低15%。

在硬开关应用中,比如高端服务器和通讯电源,SiC肖特基二极管大幅降低了功率损耗,并且得到了广泛使用。它们还越来越多地被应用到太阳能逆变器、电机驱动器、不间断电源(UPS)和电动车(EV)之中。

意法半导体推出了全套SiC二极管,其电压范围为600 ~ 1200 V,包含单、双二极管。这些产品提供多种封装选项,从DPAK到TO-247,包含绝缘TO-220AB/AC,让设计者能够灵活提高效率和可靠性,加快产品面市步伐,削减成本。

Performance comparison curve between 600 V Si, Ultrafast tandem and Si diodes

SiC diodes – now in TO-220AB/AC Insulated packages

Seven SiC diodes are now available in the TO-220AB Ins and TO-220AC Ins insulated packages with internal insulation between the silicon and the metal tab of the package. These packages provide a thermal resistance junction to heatsink (Rth(j-hs)) equivalent to or better than using external insulating foils while eliminating the fiddly, time consuming and error prone process of mounting the external insulation foil with heatsink compound between the package and the heatsink. They provide approximately 50% lower Rth(j-hs) compared to the TO-220FP package and one customer estimated that they saved approximately 20 seconds per diode in assembly time in the manufacture of their SMPS which yielded a 1% increase in units per hour on their manufacturing line.

Four 650V single diodes from 4 A to 10 A (STPSCxxH065DI) are available in the TO-220AC Ins package and three 650V dual in-series diodes from 6 A to 10 A (STPSCxxTH13TI) are available in the TO-220AB Ins package.

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