ST Life.augmented


ST’s MOSFET portfolio offers a broad range of breakdown voltages from -500 V to 1500 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. ST’s process technology for both high-voltage MOSFETs (MDmesh™) and low-voltage MOSFETs (STripFET™) has enhanced power handling capability, resulting in high-efficiency solutions.

The main features of our wide portfolio include:

  • -500 V to 1500 V breakdown voltage range
  • More than 30 package options including the new 4-lead TO247-4 featuring a dedicated control pin for increased switching efficiency, the H2PAK for high-current capability, the 1-mm-high surface-mount PowerFLAT™ 8x8 HV and the PowerFLAT 5x6 HV and VHV featuring excellent thermal performance thanks to a large exposed metal drain pad
  • Improved gate charge and lower power dissipation to meet today’s challenging efficiency requirements
  • Intrinsic fast body diode option for selected product lines
  • Wide portfolio of automotive-grade MOSFETs

In each voltage range supporting applications such as switch mode power supplies, lighting, DC-DC converters, motor control and automotive applications, ST has the right MOSFET for your design.


I2PAKFP package extends super-junction high-voltage MOSFET offering

Ideal for compact LED driver applications and slim laptop adapters, the I2PAKFP package option extends ST’s portfolio of 800 V MDmesh K5 MOSFETs and 600 V MDmesh M2 MOSFETs. Compared to the TO-220FP, this fully-molded package is 30% shorter in body height, yet maintains the same level of thermal performance and electrical isolation.  A clip can be used to mount the package, resulting in more uniform contact pressure and good thermal contact. In slim designs, the package can be mounted above the standoff height, which improves the overall reliability.
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