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STripFET F7 series

ST’s STripFET F7 series of low-voltage MOSFETs feature an enhanced trench-gate structure that lowers device on-state resistance while also reducing internal capacitances and gate charge for faster and more efficient switching.  Their excellent figure of merit (FoM) and high avalanche ruggedness help simplify designs and reduce equipment size and cost while increasing reliability in applications such as telecom or computing systems, solar inverters, industrial automation and automotive applications.

Features and benefits:

  • Among lowest RDS(on) in the market
  • Minimal RDS(on) x Qg for increased system efficiency and more compact designs
  • Lowest  Crss/Ciss ratio  for EMI immunity
  • High avalanche ruggedness

Compared to the previous STripFET F4 and F3 series, the new F7 series features a much lower on-state resistance per die area. This in turn simplifies designers’ needs for high-power designs by reducing the number of paralleled devices.

AEC-Q101-qualified 100 V STripFET™ F7 MOSFETs

ST’s high performance series of STripFET F7 MOSFETs has been extended with the introduction of three 100 V automotive-grade devices featuring the industry’s lowest on-state resistance (2.3 mOhm in H2PAK 2 and 6 leads, 2.7 mOhm in the TO-220AB) for increased system efficiency. Addressing DC-DC, DC-AC, resonant LC converters and synchronous rectification in high-performance, high-current automotive applications, these AEC-Q101-qualified MOSFETs also feature an optimized internal capacitance profile which eliminates the need for external filtering circuitry, reducing the overall design cost and size.
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