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STripFET F7 series

ST’s STripFET F7 series of low-voltage MOSFETs feature an enhanced trench-gate structure that lowers device on-state resistance while also reducing internal capacitances and gate charge for faster and more efficient switching.  Their excellent figure of merit (FoM) and high avalanche ruggedness help simplify designs and reduce equipment size and cost while increasing reliability in applications such as telecom or computing systems, solar inverters, industrial automation and automotive applications.

Features and benefits:

  • Among lowest RDS(on) in the market
  • Minimal RDS(on) x Qg for increased system efficiency and more compact designs
  • Lowest  Crss/Ciss ratio  for EMI immunity
  • High avalanche ruggedness

Compared to the previous STripFET F4 and F3 series, the new F7 series features a much lower on-state resistance per die area. This in turn simplifies designers’ needs for high-power designs by reducing the number of paralleled devices.

80 V STripFET F7 MOSFETs in H2PAK for motor control

Combining a very low on-state resistance, optimized switching behavior and excellent EMI performance, the STH270N8F7-2 and STH270N8F7-6 are ST’s latest 80 V STripFET F7 MOSFETS assembled in the high-current 2- and 6-lead H2PAK package respectively. The H2PAK package delivers a lower RDS(on) (1.7 mOhm typ.), very high current capability (up to 200 A in DC), improved current uniformity as well as low stray inductance and robust PCB solder joints enabling highly efficient and reliable designs.
The two MOSFETs also feature high avalanche ruggedness for protection against potentially damaging hard conditions. An optimized body-drain diode recovery behavior reduces the switching noise and increases the dynamic dV/dt ruggedness. This makes the two MOSFETs ideal for bridge configurations in motor control designs.  
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