Features and benefits:
- Among lowest RDS(on) in the market
- Minimal RDS(on) x Qg for increased system efficiency and more compact designs
- Lowest Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
Compared to the previous STripFET F4 and F3 series, the new F7 series features a much lower on-state resistance per die area. This in turn simplifies designers’ needs for high-power designs by reducing the number of paralleled devices.
80 V STripFET F7 MOSFETs in H2PAK for motor control
The two MOSFETs also feature high avalanche ruggedness for protection against potentially damaging hard conditions. An optimized body-drain diode recovery behavior reduces the switching noise and increases the dynamic dV/dt ruggedness. This makes the two MOSFETs ideal for bridge configurations in motor control designs.