ST Life.augmented

N-channel STripFET > 30 V to 350 V

ST’s STripFET MOSFETs with breakdown voltages in the range from 33 to 350 V offer low gate charge and low on-resistance down to 1.1 mΩ (40 V) in a PowerFLAT 5x6 package. They are designed to meet a broad range of requirements for synchronous rectification, UPS, motor control, SMPS, power-over-Ethernet (PoE), inverter and automotive applications.
These MOSFETs are available in a wide range of miniature and high-power packages: DPAK, D2PAK, ISOTOP, Max247, SOT-223, TO-220, TO-220FP, TO-247, PowerFLAT 5x6 and 3.3x3.3.

AEC-Q101-qualified 100 V STripFET™ F7 MOSFETs

ST’s high performance series of STripFET F7 MOSFETs has been extended with the introduction of four 100 V automotive-grade devices featuring the industry’s lowest on-state resistance (2.3 mOhm in H2PAK 2 and 6 leads, 2.7 mOhm in the TO-220AB) for increased system efficiency. Addressing DC-DC, DC-AC, resonant LC converters and synchronous rectification in high-performance, high-current automotive applications, these AEC-Q101-qualified MOSFETs also feature an optimized internal capacitance profile which eliminates the need for external filtering circuitry, reducing the overall design cost and size.
Feedback Form
Customer Feedback