ST’s portfolio of P-channel MOSFETs has been recently enlarged with the addition of trench-gate devices. These new P-channel STripFET MOSFETs feature extremely low on-resistance. Available in very small form factor packages, they are specifically designed for portable applications. MOSFET features for this voltage rating include:
- Very low RDS(on) for increased application efficiency
- Standard, logic and ultra level threshold for increased design flexibility
Automotive-grade p-channel MOSFETs
ST has extended its offering of automotive-grade MOSFETs with the introduction of two p-channel trench-based MOSFETs. Based on ST’s STripFET H6 and F6 technology respectively, the STD37P3H6AG (-30 V, standard level driven) and STD45P4LLF6AG (-40 V, logic level driven) are housed in a DPAK package. They help simplify circuitry while optimizing performance and component count in automotive applications such as high-side switches, reverse polarity protection and audio amplifiers.