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RF DMOS Transistors

ST offers a broad portfolio of RF DMOS transistors operating from a supply voltage ranging from 28 up to 250 V. They target applications in the 1 MHz to 250 MHz frequency range and feature high peak power (up to 1.2 kW) and high ruggedness capability (infinite:1 VSWR).

Target applications include:

  • RF plasma generators
  • Laser drivers
  • RF heating
  • Magnetic resonance imaging (MRI)
  • HF transceivers
  • FM broadcast

50 V DMOS RF MOSFETs in STAC® air-cavity package

Compared to devices housed in ceramic packages, the new 50 V DMOS devices housed in ST’s innovative STAC air cavity package feature a 25% lower thermal resistance and higher MTTF combined with improved RF performances (up to 350 W) and ruggedness requirements (65:1 all phases VSWR). They represent a cost-effective solution for applications such as RF generators for PECVD, plasma sputtering and flat-panel and solar-cell manufacturing equipment.
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