ST’s 28/32 V LDMOS transistors targeting operation up to 2 GHz feature a significant improvement in terms of RF performance (+4 dB gain, +15% efficiency), ruggedness (>20:1 VSWR) and reliability compared to the previous LDMOS generation. Available in both ceramic packages and in the cost-effective PowerSO-10RF plastic package, they are ideal for applications such as repeaters, base stations, government wideband communications and L-band satellite uplink equipment.
Key features
- Frequency: from HF to 2 GHz
- Breakdown voltage BVDSS: >80 V
- Supply voltage: up to 32 V
- Output power: up to 150 W
- Gain: 20 dB
- Efficiency: 65%
- Ruggedness: >20:1 VSWR all phases (CW)
- Available in die form
