ST’s silicon-carbide diodes take advantage of SiC’s superior physical characteristics over Si, with 4 times better dynamic characteristics and 15% less forward voltage, VF.
Their low reverse recovery characteristics make ST’s silicon-carbide diodes a key contributor to energy savings in SMPS applications and in emerging domains such as solar energy conversion, EV or HEV charging stations, and other applications such as welding equipment and air conditioners.
ST’s SiC product portfolio includes a 20 A, 600 V diode, housed in a halogen-free TO-247 package, to extend its 4- to 12-amp, through-hole and SMD package offer.
ST’s silicon-carbide diodes are now entering the second generation, with a 6 A, 1200 V device, and a 650 V series.
