To meet the latest stringent efficiency regulations (Energy Star, 80Plus, European Efficiency), power-supply designers must consider the use of new power converter topologies and more efficient electronic components such as high-voltage silicon-carbide (SiC) Schottky rectifiers.
ST’s SiC diodes take advantage of silicon carbide’s superior physical characteristics over Si, with 4 times better dynamic characteristics and 15% less forward voltage, VF.
In hard-switching applications such as high-end-server and telecom power supplies, SiC Schottky diodes show a significant power-loss reduction and are commonly used. They are also increasingly being used in solar inverters, motor drives, uninterruptible power supplies (UPS) and electrical vehicle (EV) applications.
ST now provides a full family of SiC rectifiers, ranging from 600 V to 1200 V including single and dual diodes. These products are available in a variety of packages from DPAK to TO-247 and offer great flexibility to designers looking for efficiency, robustness, and reduced time to market and cost.
ST extends its 650 V new generation SiC diodes with dual-configuration devices
ST’s new 650 V rated silicon-carbide diode range now includes common-cathode or series dual-configuration devices, allowing use in interleaved or bridgeless power-factor correction (PFC) circuits:
- The STPSC8/12/16/20H065C (8, 12,16, 20 A), have a common-cathode configuration, in standard TO-220AB package (and TO-247 for the 20-amp device)
- The STPSC6/8/10TH13TI (6, 8, 10 A), have a series configuration, in insulated TO-220AB package simplifying the heatsink fixing and replacing external isolation
These devices combine SiC performance advantages of higher energy efficiency and ruggedness versus silicon rectifiers, with the space savings and EMI reduction of dual integrated diodes.
They enhance energy efficiency and simplify the design of equipment such as server and telecom power supplies, solar inverters or electric-vehicle charging stations.