To meet the latest stringent efficiency regulations (Energy Star, 80Plus, European Efficiency), power-supply designers must consider the use of new power converter topologies and more efficient electronic components such as high-voltage silicon-carbide (SiC) Schottky rectifiers.
ST’s SiC diodes take advantage of silicon carbide’s superior physical characteristics over Si, with 4 times better dynamic characteristics and 15% less forward voltage, VF.
In hard-switching applications such as high-end-server and telecom power supplies, SiC Schottky diodes show a significant power-loss reduction and are commonly used. They are also increasingly being used in solar inverters, motor drives, uninterruptible power supplies (UPS) and electrical vehicle (EV) applications.
ST now provides a full family of SiC diodes, ranging from 600 V to 1200 V including single and dual diodes. These products are available in a variety of packages from DPAK to TO-247, including insulated TO-220AB/AC, and offer great flexibility to designers looking for efficiency, robustness, and reduced time to market and cost.
SiC diodes – now in TO-220AB/AC Insulated packages
Four 650V single diodes from 4 A to 10 A (STPSCxxH065DI) are available in the TO-220AC Ins package and three 650V dual in-series diodes from 6 A to 10 A (STPSCxxTH13TI) are available in the TO-220AB Ins package.