ST Life.augmented

STH260N6F6-2

N-channel 60 V, 1.7 mOhm typ., 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package
  • active Active

This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.

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Errata Sheet
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Datasheet

Key Features

  • Low gate charge
  • Very low on-resistance
  • High avalanche ruggedness

Design Resources

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Technical Documentation

Product Specifications

Description Version Size
pdf
DS7207: N-channel 60 V, 1.7 mΩ typ., 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 package
4.0 725 KB

HW Model & CAD Libraries

HW Model & CAD Libraries

Description Version Size
zip
STH260N6F6-2 PSpice model
10 KB

Presentations & Training Material

Presentations

Description Version Size
pdf
60 V to 80 V STripFETVI DeepGATE
1.0.0 748 KB
pdf
STripFET VI DeepGATE
1.0.0 892 KB

Sample & Buy

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Part Number Marketing StatusPackagePacking TypeAutomotive GradeOrder From STUnit Price (US$)*
@
Distributor AvailabilityRoHS Compliance GradeDownload
Material Declaration**
STH260N6F6-2ActiveH2PAK-2Tape And Reel_Free SamplesDistributor reported inventory date: 2014-09-16
Distributor NameRegionStockMin. order
Newark Element14Order NowAMERICA9800
Farnell Element14Order NowEUROPE7421
DIGIKEYOrder NowWORLDWIDE8621
Ecopack1PDF
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(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
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