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Silicon carbide Power MOSFET 45 A, 1200 V, 80 mΩ, N-channel in HiP247 package
  • Evaluation Evaluation

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

pdf Please read
Errata Sheet
pdf データシート

Key Features

  • Very tight variation of on-resistance vs. temperature
  • Slight variation of switching losses vs. temperature
  • Very high operating temperature capability (200 °C)
  • Very fast and robust intrinsic body diode
  • Low capacitance
  • Easy to drive



Technical Documentation

Product Specifications

Description Version Size
DS9011: Silicon carbide Power MOSFET: 45 A, 1200 V, 80 mΩ, N-channel in HiP247™ package
5.0 752 KB

Technical Notes & Articles

Description Version Size
TA0349: Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs
1.0 1,100 KB

User Manual

Description Version Size
UM1575: Spice model tutorial for Power MOSFETs
1.2 1,550 KB

HW Model & CAD Libraries

HW Model & CAD Libraries

Description Version Size
SCT30N120 PSpice model
9 KB

Publications and Collaterals


Description Version Size
SiC MOSFET: The real breakthrough in high-voltage switching
1,893 KB

サンプル& 購入

製品型名 Marketing StatusPackagePacking TypeAutomotive GradeOrder From STUnit Price (US$)*
@ 1000
Distributor AvailabilityRoHS Compliance GradeDownload
Material Declaration**
SCT30N120EvaluationHiP247Tube_-35No availability reported, please contact our Sales officeEcopack2PDF

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(**)弊社ホームページで入手できるMaterial Declaration(材料宣誓書)のフォームは、各パッケージ・タイプで最も一般的に使用されるパッケージに基づいた包括的な文書です。そのため、特定のデバイスについて100%正確ではない可能性があります。特定のデバイスに関する情報については、 弊社セールスオフィス にお問合せ下さい。
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