Their enhanced trench-gate structure provide ST’s series of 80 and 100 V STripFET VII DeepGATE MOSFETs with the industry’s lowest on-state resistance combined with reduced internal capacitances and gate charge for faster and more efficient switching. Their excellent figure of merit (FoM) and high avalanche ruggedness help simplify designs and reduce equipment size and cost while increasing reliability in applications such as telecom or computing systems, solar inverters, industrial automation and automotive applications.