意法半导体的MOSFET产品采用先进的封装,具有很宽的击穿电压范围(-500 ~ 1500 V)、低栅极电荷和低导通电阻。意法半导体面向高、低压MOSFET的制程增强了功率处理能力,从而实现了高效解决方案。

产品的主要特性包括:

  • 击穿电压范围:-500 ~ 1500 V
  • 提供30多种封装选项,包括带有专用控制引脚、能够提高开关效率的新型4引脚TO247-4封装和1-mm表贴封装PowerFLAT™ 8x8 HV、PowerFLAT 5x6 HV及VHV封装。这些表贴封装带有大片裸露金属作为漏极,使得其具有优异散热能力。
  • 改善了栅电荷,降低了功耗,满足了当今极具挑战性的效率要求
  • 面向所选产品线的本征快速体二极管

在各个支持负载点、电信DC-DC转换器、PFC、开关模式电源和汽车设备等应用的电压范围内,意法半导体都有符合您设计要求的MOSFET。

Main MOSFET series

Automotive MOFETs in tiny 5x6 mm dual-side cooling package

ST has extended its offering of AEC-Q101 MOSFETs with the introduction of two 40 V devices in the advanced PowerFLAT TM 5x6 dual-side cooling (DSC) package with wettable flanks. The STLD200N4F6AG and STLD125N4F6AG, with a maximum on-resistance of 1.5 mΩ and 3.0 mΩ respectively, ensure high efficiency and help simplify system thermal management. The 0.8 mm-high PowerFLAT 5x6 DSC retains the footprint and thermally efficient bottom-side design of the standard wettable flank package, while it exposes the top-side source electrode to further enhance heat dissipation. This allows a higher current rating that increases power density, enabling designers to build smaller ECUs without trading off functionality, performance, or reliability.

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