Silicon carbide - The latest breakthrough in high-voltage switching and rectification

ST’s portfolio of silicon carbide devices includes 650 / 1200 V SiC MOSFETs featuring the industry’s highest junction temperature rating of 200 °C for more efficient and simplified designs, and SiC diodes ranging from 600 to 1200 V which feature negligible switching losses and 15% lower forward voltage (VF) than standard silicon diodes.

SiC MOSFETs
SiC MOSFEts

Main characteristics:

  • Industry’s highest operating junction temperature (Tj max) of 200 °C for reduced cooling requirements and heatsink
  • Low on-state resistance over the entire temp range to 200 °C for reduced cooling requirements with a higher system efficiency
  • Extremely low power losses
  • Small increase of on-resistance versus temperature
    Very easy to drive (resulting in smaller component count)
  • High operating frequency for reduced switching losses and smaller and lighter systems
  • Very fast and robust intrinsic body diode

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SiC Diodes
SiC diodes

Main characteristics:

  • Very low forward conduction losses for increased efficiency
  • Low switching losses for reduced size and cost of the power converter
  • Soft switching behavior (low EMC impact), simplifying certification and speeding time-to market
  • High forward surge capability for increased robustness and reliability
  • High power integration (dual diodes) for reduced PCB form factor
  • High-temperature capability with Tj max = 175 °C
  • AEC-Q101-qualified and PPAP-capable automotive-grade SiC diodes 

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