The workshop is jointly organized by STMicroelectronics and the Institute for Microelectronics and Microsystems of the Italian National Research Council (IMM-CNR). It represents a melting point between the academic and research world and the industrial development in the field of the structural characterization and the microanalysis by electron microscopy. 

The scope of the event will be focused on new methods applied to semiconductor devices (silicon based, wide band gap, metallic interconnections, nanotechnology, etc) and materials science. It will highlight recent progress in instrumentation, in chemical and structural analysis, in sample preparation by mechanical thinning and by FIB, as well as in situ devices polarization dependent analyses.
 

The scientific program will be opened by a lectio magistralis delivered by Prof. Giulio Pozzi (Phys. Dep. of Bologna University) regarding Electron Holography: from the beginning to recent developments. The session will continue with scientific presentations given by researchers coming from STMicroelectronics, IMM-CNR, ENEA, LETI CEA and Companies specialized in electron microscopy. 

 

The workshop will present new insights focusing on the following topics:

  • TEM: Advanced Structural Characterization (STEM, nBED, Holodark, Tomography, ASTAR, …) and related  Spectroscopic Techniques  (EELS, EDS)
  • SEM: Advanced Characterization  (EBIC, Voltage Contrast, Catodoluminescence, EDS, …)
  • Novel specimen preparation techniques by FIB
  • Materials: SiC, GaN, Phase Change  Materials, Metal Alloys, nanowire, ...
  • Latest company products: Helium Ion Microscope, New generation of  (S)TEM and FIB, Highly controlled mechanical specimen preparation,...


There is no charge to participate in this event, but you must register through my.st.com.

 

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Preliminary agenda

Time Topic Speaker
09:00 - 09:20 Welcome from Catania Manufacturing Paolo Lanza
09:20 - 09:40 Welcome from CNR-IMM Corrado Spinella
09:40 - 10:25 Lectio Magistralis – Electron holography: past, present and future Giulio Pozzi
10:25 - 10:40 Coffee Break
10:40 - 11:00 Defects characterization of ion implanted P doped 4H-SiC S. Boninelli - IMM Catania
11:00 - 11:20 Advanced TEM Sample Prep by FIB F. Cazzaniga - ST - Agrate
11:20 - 11:40 Sponsor – Leica (Microcontrol)
11:40 - 12:00 Scanning Electron Microscopy techniques for technological applications Morandi - IMM Bologna
12:00 - 12:20 Quantitative EDS analysis in transmission electron microscopy using unconventional reference materials M. Nacucchi - ENEA
12:20 - 12:40 Sponsor – Hitachi “Hitachi solutions from sample preparation to analysis”
12:40 - 13:00 2D & 3D advanced Transmission Electron Microscopy for semiconductor characterization N. Bernier – Leti CEA (Fr)
16:10 - 16:30 Lunch
14:30 - 14:50 TEM EDS and AES quantitative analysis of Ni segregation in metal layers D. Mello - ST - Catania
14:50 - 15:10 Application of EELS in sub-Angstrom HRTEM G. Nicotra - IMM Catania
15:10 - 15:30 Sponsor - Zeiss
15:30 - 15:50 The Helium Ion Microscopy: some experimental results to disclose nanostructures M. Re - ENEA
15:50 - 16:10 TEM characterization of 4H-SiC/Gate Ox intarface C. Bongiorno - IMM Catania
16:10 - 16:30 Coffee Break
16:30 - 16:50 Advanced Transmission Electron Microscopy studies of the crystallization process in Ge-rich phase change materials for future memory devices  
16:50 - 17:10 Advanced TEM characterization for 28nm Phase Change Memory devices (STEM imaging, EDX & ASTAR techniques) L. CLEMENT, A. VALERY ST – Crolles (Fr)
17:10 - 17:30 Measuring lattice strain in semiconductors with the TEM: a short review Balboni – IMM Bologna
17:30 - 17:50 TEM characterization of phase change memory Mario Scuderi - IMM Catania
17:50 - 18:10 Sponsor – Tescan  (assing)

 

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