DATE

TIME (CET)

Title

Speaker

18 Set

2:00 pm

Keynote
The golden age of SiC: turning the potential of SiC into opportunities for energy conversion applications

Mario Saggio,
ST presenter

18 Sept

4:00-6:00

Poster presentation – Session 11
Gate resistance integration in SiC MOSFETs: performance simulations under different implementation methods

Mario Pulvirenti,
ST presenter

19 Sept

4:30-6:30

Poster presentation – Session 17D
Silicon arbide process defect characterization and failure analysis turnaround enhancement with inline SEMVision® G3MAXFIB application at STMicroelectronics production line

Antonio Rossitto,
ST presenter

19 Sept

4:30-6:30

Poster presentation – Session 17C
Study of the variation of the charge carrier lifetime profile in the drift region of planar 4H-SiC MOSFETs

Melissa Scalisi,
ST presenter

19 Sept

4:30-18:30

Poster Presentation – Session 17B
Buffer layer dependence of defectivity in 200mm 4H-SiC homoepitaxy

Domenica Raciti,
ST presenter

20 Sept

9:00

Paper Presentation – Session 18B
Epitaxial thickness uniformity observation on different 8 inch 4H-SiC substrates.

Ruggero Anzalone,
ST presenter

20 Sept

11:20

Paper presentation – Session 19A
Formation of Ti ohmic contact on p-SiC by laser annealing

Simone Rascunà,
ST presenter

20 Sept

4:30-6:30

Poster presentation – Session 21D
Electrical and structural properties of ohmic contacts of SiC diodes fabricated on thin wafers

Paolo Badalà,
ST presenter

20 Sept

4:30-6:30

Poster presentation – Session 21C
Reduction of the SiC trench sidewalls striations

Dario Tenaglia,
ST presenter

20 Sept

4:30-6:30

Poster Presentation – Session 21B
GaN cap UV spectroscopy assessment in AlGaN/GaN HEMT

Cristiano Calabretta,
ST presenter

20 Sept

4:30-6:30

Poster Presentation – Session 21D
Study of lattice recovery induced by thermal activation processes in P-implanted 4H-SiC epitaxial layers

Domenico Mello,
ST presenter

21 Sept

4:30-6:30

Poster Presentation – Session 25C
A Comparative Study of the Analytical and Finite Elements Approaches to investigate the Equivalent Thickness of Large 4H-SiC Taiko Wafers

Vincenzo Vinciguerra,
ST presenter

21 Sept

4:30-6:30

Poster presentation – Session 25C
A comparison between different post grinding processes on 4H-SiC wafers

Brunella Cafra,
ST presenter

21 Sept

4:30-6:30

Poster presentation – Session 25B
Unclamped inductive switching response of SiC MOSFETs under extreme slow transient

Mario Pulvirenti,
ST presenter

21 Sept

4:30-6:30

Poster presentation – Session 25C
Impact of Al ion implantation on 4H-SiC epitaxial layer

Cristiano Calabretta
ST presenter

22 Sept

9:30-10:30

Chairman – Session 26A
Device 5: high performance SiC MOSFETs concepts

Mario Saggio,
ST Chair