Improving efficiency and performance using the latest SiC and FERD rectifier technologies
Tuesday, February 26th, 2019 | 12:00 pm Central Time
Discover how high-voltage Silicon Carbide (SiC) and low-voltage Field-Effect Rectifier Diode (FERD) technologies enable higher performance and reduced costs in power electronics systems
Join us for a one-hour webinar to learn about the advantages that SiC Schottky diodes and FERDs offer compared to more standard rectification diodes, as well as ST's vision on which applications stand to gain the most from these components.
We will discuss ST’s best-in-class rectification diode technologies for high-voltage and low-voltage rectifiers, including details on their electrical behavior and characteristics. Our broad device portfolio and available package options will also be presented, along with several application examples.
You will learn:
- what SiC rectifiers are and how their unique characteristics make them ideal for high-voltage topologies
- about field-effect rectification diode (FERD) technology and its advantages over standard Schottky diodes in low-voltage systems
- how both of these high-efficiency technologies can improve the performance of your application
There is no charge to participate in this event, but it is necessary to register through my.st.com.
If you have a myST account
If you do not have a myST account
There will be a Q&A session at the end of the webinar to answer your questions in real time.
- High-voltage SiC power Schottky rectifiers
- What is SiC?
- SiC technologies
- SiC rectifier portfolio
- Switching characteristics
- Low-voltage field effect rectifiers
- FERD technology
- FERD portfolio
- Application examples
- FERD benefits
- FERD packages
- Real-time Q&A
||Cyril Borchard is a Senior Technical Marketing Engineer in charge of power discrete products with STMicroelectronics. He is based in the United States.
Not sure if you can make it? No problem! Register now and we will be sure to email you the recorded webinar.
About SiC and FERD rectifier technology
Silicon Carbide (SiC) rectifiers
SiC is a wide bandgap material that allows the design of high-voltage Schottky-structured rectifiers with negligible switching losses and high-temperature capability. The fact that the switching losses are dramatically reduced permits improvement in the efficiency of power converters working in hard-switching mode.
Field-effect rectifier diodes (FERDs)
Field-effect rectifiers offer an improved price/performance ratio for low-voltage rectification (up to 100 V). The technology allows the design of diodes with low conduction losses coupled with no switching losses and controlled leakage current. They offer higher reliability and lower risk of thermal runaway compared to Schottky diodes. They also allow designers to reach higher efficiency levels without the need to move to synchronous rectification systems based on more expensive MOSFETs and controllers. ST’s FERDs come in a variety of power thru-hole and SMD packages, allowing for greater design flexibility and high power-integration levels. For each voltage family, various electrical trade-offs are possible to optimize the performance of the rectifier, depending on the application conditions.