Silicon Carbide MOSFETs and Diodes
Design Opportunities in Silicon Carbide for New Energies, EV, and Industrial Power Conversion
Watch the webinar recording to learn the fundamentals of wide bandgap semiconductors, and how the unique properties of silicon carbide enable development of new, higher-performing power solutions for next-generation applications.
Efficiency in power conversion is critical for the deployment and adoption of new energies, including solar, wind, and battery-powered systems used in industrial and automotive environments. The physical properties of wide bandgap (WBG) semiconductor materials, such as silicon carbide (SiC), are proving to be very effective towards that goal, and as a result a new wave a WBG power discrete products have reached the market in the past few years.
During the session, you'll be introduced to SiC MOSFETs and diodes capable of reaching extremely high power density at component and system level. This characteristic enables them to provide excellent efficiency in high-voltage, high-frequency converters, particularly in electric vehicle (EV) and industrial applications.
You will learn:
- The basics of wide bandgap semiconductors
- The benefits offered by SiC MOSFETs and diodes
- SiC-based system solutions from ST for:
- EV traction inverter
- On-board charging
- Modified Vienna rectifier for industrial power factor correction (PFC)
|Alfredo Arno is the Sr. Product Marketing Manager for Automotive Power Discrete Products and Modules in ST North America. Beginning his career in '96 as a researcher at the Microwave Modeling Department of TU Delft in the Netherlands, he joined ST in '98 in Italy to manage the company’s first RF power lab. He transferred to the US in 2001 to begin a career in product marketing. Since then, he has managed various products across markets ranging from power discretes to RFIC, including Bluetooth modules for the auto, industrial and medical sectors. Alfredo holds a Masters in Electronics and Microwave from the University of Palermo, Italy.|
About silicon carbide power devices from STMicroelectronics
ST’s portfolio of silicon carbide power MOSFETs features the industry’s highest operating junction temperature rating of 200 °C and significantly reduced total power losses for more efficient, smaller and lighter systems. They feature a very low on-state resistance per area even at high temperatures and excellent switching performance versus the best-in-class silicon technologies, with minimal variation versus temperature.
Silicon carbide diodes from ST range from 600 to 1200 V – as single and dual diodes – and feature unbeatable reverse recovery characteristics and improved VF. Available in a wide variety of packages, from D²PAK to TO-247 and the insulated TO-220AB/AC, they offer great flexibility to designers looking for efficiency, robustness and fast time-to-market.