3.6 kW SiC MOSFET bridgeless totem pole PFC with SCR inrush current limiter

Join us for 1-hour webinar to discover how the STEVAL-DPSTPFC1 delivers a compact and turnkey power factor corrector up to 3.6kW

 

Tuesday, June 8th 2021 | 03:00 pm CEST

 

Register now

AC-DC power converter designers continue to pursue higher input power factor (PF) and lower harmonic distortion THD with increasingly smaller and lighter systems, while they are given less development time to finalize their projects, including fine-tuning converter performance.

During this one-hour webinar, you will see how the STEVAL-DPSTPFC1 reference board helps designers meet the challenges of a modern AC-DC power factor corrector up to 3.6 kW with a turnkey bridgeless totem pole boost circuit. This digitally controlled bridgeless totem pole PFC with inrush current limitation delivers 97.5% full system peak efficiency and CISPR 5022 EMI compliance in a robust (4 kV surge voltage tolerance) and compact design based primarily on SCR thyristors, SiC MOSFET, isolated drivers and the STM32 MCU.

Agenda

  • Target applications and markets
  • STEVAL-DPSPFC-1 solution overview
  • Totem pole topology operation
  • Inrush current limitation with SCR
  • STEVAL-DPSPFC-1 reference design performance
  • Key power products
    • SiC MOSFET
    • Isolated Gate Drivers STGAP
    • SCR
    • Auxiliary SMPS – Viper family

After the webinar, there will be a 15-minute Q&A session where our experts will be available to answer any questions.

Registration information

To participate in this free online event, simply register on my.st.com.

Register now

Speaker

Ales Loidl

Ales Loidl heads the Power & Energy Application Lab in Prague, covering auxiliary power supplies in the order of a few watts up to tens of kilowatt converters for solar and fast EV chargers. Ales has accumulated more than 17 years of experience and several patents after starting on lighting ballast converters for LEDs and fluorescent lamps. Today, Ales is focusing on applications and behavior of components based on SiC and GaN wide-bandgap materials.