Wide Bandgap Drivers: Getting the Most from SiC and GaN Devices
Discover a new dedicated lineup of wide bandgap drivers optimized for SiC and GaN transistors
Watch the one-hour on-demand webinar, where we unveil the latest innovations in gate driving technology aimed at maximizing the performance of wide bandgap (WBG) transistors.
The session focuses on three new additions to our STDrive family, designed specifically to drive Gallium Nitride (GaN) and Silicon Carbide (SiC) transistors efficiently.
We start by introducing the newly released STDRIVEG600, a single-chip half-bridge gate driver for enhancement-mode GaN FETs. The high-side section is designed to withstand voltages up to 600 V, and the device is optimized to drive high-speed GaN transistors thanks to its high current capability, short propagation delay, and ability to operate with supply voltages down to 5 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing with a microcontroller and DSP.
Then we discuss the benefits of the STGAP2SIC, a single gate driver that provides galvanic isolation between the gate driving channel and low voltage control and interface circuitry. This device integrates UVLO protection with optimized value for SiC MOSFETs and thermal shutdown to facilitate the design of highly reliable systems. In particular, the gate driver is characterized by 4 A capability and rail-to-rail outputs, making the device also suitable for mid- and high-power applications such as power conversion and motor driver inverters in industrial applications.
Finally, we cover the highly integrated MasterGaN series, a family of 5 advanced power systems-in-package combining a gate driver and two 600 V enhancement mode GaN transistors in half-bridge configuration, each with a different RDS(ON).
To conclude the session, we present a range of evaluation boards for GaN applications to help you get a head-start developing with this new technology.
You will learn:
- Why optimized drivers for wide bandgap transistors are so important
- The differences in driving GaN transistors and SiC transistors
- When it's advantageous to integrate the driver and the transistor
|George Hempt (English Session) |
George is a Product Marketing Engineer covering industrial power conversion, motion control, and wireless battery charging system technology for STMicroelectronics. He has a background in electrical engineering with engineering and business experience in the electric utilities, engineering construction, and electronic design automation industries. His current focus is in industrial power conversion and motion control, working with customers and promoting an industry-leading product portfolio. George holds a B.S. in Electrical and Computer Engineering from the Virginia Military Institute, and a M.S. in Electrical Engineering and MBA from the University of Pittsburgh Katz Graduate School of Business.
|Rogerio Bueno (Portuguese session) |
Rogerio is a Product Marketing Engineer covering industrial power conversion products for STMicroelectronics, based in the São Paulo, Brazil office. He joined ST in 2012 and has more than 25 years in product development, from engineering, marketing, and product management perspectives. His current focus is industrial power conversion supporting ST's industry-leading portfolio of power conversion, motion control and automation, smart grid and wireless battery charging systems. Rogerio is from São Paulo and holds a BS in Electrical Engineering from IMT - Maua Institute of Technology, and an MBA from ESPM – Superior School of Marketing.