Silicon Carbide Diodes  

In addition to ensuring compliance with today's most stringent energy efficiency regulations (Energy Star, 80Plus, and European Efficiency), ST's silicon-carbide diodes show four times better dynamic characteristics with 15% less forward voltage (VF) than standard silicon diodes.

The efficiency and robustness of solar inverters, motor drives, uninterruptible power supplies and circuits in electrical vehicles are therefore greatly improved by the use of silicon-carbide (SiC) diodes.

ST proposes a 600 to 1200 V range with single and dual diodes encapsulated in package sizes from DPAK to TO-247, including the ceramic insulated TO-220 as well as the slim and compact PowerFLAT 8x8, the new standard for high-voltage (HV) surface-mount (SMD) packages.

Performance comparison curve between 600 V Si, Ultrafast tandem and Si diodes

SiC diodes – compact surface-mount PowerFLAT™ 8x8 HV packages

To help engineers design denser, more efficient power conversion stages, ST's compact surface-mount PowerFLAT™ 8x8 HV devices feature excellent thermal performance. Moreover, ST took a few extra steps to propose a 4 to 8 A range (STPSC4H065DLF, STPSC6H065DLF and STPSC8H065DLF) with super-power density.

  • Package less than 1 mm thick
  • Forward voltage (VF) improved by 200 mV
  • High-voltage creepage: 2.75 mm
  • Designed and built for high inrush current (IFSM)

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1200 V silicon-carbide diodes, Industrial and automotive-grade
Unbeatable efficiency and robustness

1200V, 10A high-surge capable SiC diode
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The best-in-class forward voltage drop

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