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In addition to ensuring compliance with today's most stringent energy efficiency regulations (Energy Star, 80Plus, and European Efficiency), ST's silicon-carbide diodes show four times better dynamic characteristics with 15% less forward voltage (VF) than standard silicon diodes. 
Silicon-carbide diodes belong to our STPOWER™ family. 

The efficiency and robustness of solar inverters, motor drives, uninterruptible power supplies and circuits in electrical vehicles are therefore greatly improved by the use of silicon-carbide (SiC) diodes.

ST proposes a 600 to 1200 V range with single and dual diodes encapsulated in package sizes from DPAK to TO-247, including the ceramic insulated TO-220 as well as the slim and compact PowerFLATTM 8x8 featuring an excellent thermal performance, the new standard for high-voltage (HV) surface-mount (SMD) packages and available for 650 V SiC Diodes from 4 A to 10 A.

  

Featured Products

SiC diodes – compact surface-mount PowerFLAT™ 8x8 HV packages

To help engineers design denser, more efficient power conversion stages, ST's compact surface-mount PowerFLAT™ 8x8 HV devices feature excellent thermal performance. Moreover, ST took a few extra steps to propose a 4 to 10 A range (STPSC4H065DLFSTPSC6H065DLFSTPSC8H065DLF, STPSC10H065DLF and STPSC10065DLF) with super-power density.

  • Package less than 1 mm thick
  • Forward voltage (VF) improved by 200 mV
  • High-voltage creepage: 2.75 mm
  • Designed and built for high inrush current (IFSM)
  • Rth thermal resistance as low as 1.7°C/W

 

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