The PWD5F60 is an advanced power system-in package integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration.
The integrated power MOSFETs have RDS(ON) of 1.38 Ω and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be easily supplied by the integrated bootstrap diode. The high integration of the device allows to efficiently drive loads in a tiny space.
The PWD5F60 accepts a supply voltage (VCC) extending over a wide range (10 V to 20 V) and also features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions.
The input pins extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors.
The PWD5F60 embeds two uncommitted comparators available for protections against overcurrent, overtemperature, etc.
The PWD5F60 operates in the industrial temperature range, -40 °C to 125 °C.
The device is available in a compact VFQFPN package.
|Part Number||Package||Packing Type||Marketing Status||Unit Price (US$) *||Quantity||ECCN (US)||Country of Origin||More info||Order from ST||Order from Distributors|
|PWD5F60TR||QFN.150.70.10-46L||Tape And Reel||Active : Product is in volume production||2.15||1000||EAR99||-||MORE INFO||Free Sample Add to cart||DISTRIBUTOR AVAILABILITY|
|PWD5F60||QFN.150.70.10-46L||Tray||Active : Product is in volume production||2.15||1000||EAR99||-||MORE INFO||Free Sample Add to cart||DISTRIBUTOR AVAILABILITY|
|Part Number||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.