ST’s MDmesh™ K5 series, currently the only very high voltage super-junction technology in the market, ensures the best efficiency and safety margin in the marketplace for SMPS (i.e. metering, weldings, flat panel televisions), lighting (i.e. LED drivers, HID ballasts), solar inverters, factory automation (i.e. industrial drives).

The power MOSFETs enable designers to meet increasingly strict limits on maximum power consumption and minimum energy efficiency specified by eco-design standards such as Energy Star and the EU’s energy-related products (ErP) directive. They are available at 800 V, 900 V, 950 V, 1050 V, 1200 V and 1500 V.

    Key Features                                                                      Key Benefits
          - Extremely good RDS(on) at very high BVDSS                      - High efficiency with lower design complexity
          - High switching speed                                                        - Especially targeted for flyback LED driver topologies
          - 800-1500 V BVDSS rated                        

The only 1200 V MOSFETs in Super Junction Technology

The newest STx8N120K5 1200 V, 2 Ohm (max.), 6A MOSFETs complete ST’s portfolio of very-high-voltage MOSFETs fully developed using ST’s proprietary MDmesh™ K5 super-junction technology for an improved power density and higher efficiency. 

Thanks to their very low RDS(on) and best-in-class gate charge (Qg) for ease of use and efficient designs, ST's MDmesh™ K5 MOSFETs are well suited for flyback converters in metering, telecom, on-board charger, and 3-phase auxiliary power supply applications.

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