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ST's STripFET™ F7 series of low-voltage power MOSFETs, ranging from 40 V to 120 V, feature an enhanced trench-gate structure that lowers device on-state resistance, while also reducing internal capacitances and gate charge for faster and more efficient switching.

Their excellent figure of merit (FoM) and high avalanche ruggedness help simplify designs, reduce equipment size and cost, while increasing reliability in applications such as telecom or computing systems, solar inverters, motor control and automotive applications. These power MOSFETs are belonging to the STPOWER™ family.

Features and benefits

  • Among lowest RDS(on) in the market
  • Minimal RDS(on) x Qg for increased system efficiency and more compact designs
  • Optimized Crss/Ciss ratio for EMI immunity
  • High avalanche ruggedness

Compared to the previous F4 and F3 series, the latest STripFET F7 series of low-voltage power MOSFETs features a much lower on-state resistance per die area. This in turn simplifies designers' needs for high-power designs by reducing the number of paralleled devices.

Our wide STPOWER™ product portfolio, combined with state-of-the art packaging and protections for high reliability and safety, helps designers find the right solutions for customized, high-efficiency applications that will last a long lifetime.


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