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  • The PD84010-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5 V in common source mode at frequencies of up to 1 GHz. PD84010-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD84010-E’s superior linearity performance makes it an ideal solution for portable radio applications.

    The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.

    Key Features

    • Excellent thermal stability
    • Common source configuration
    • POUT = 10 W with 14.3 dB gain @ 870 MHz / 7.5 V
    • Plastic package
    • ESD protection
    • In compliance with the 2002/95/EC European directive
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Technical Documentation

    • Description Version Size Action
      DS5408
      RF power transistor, LdmosST plastic family N-channel enhancement-mode lateral MOSFETs
      3.1
      309.24 KB
      PDF
      DS5408

      RF power transistor, LdmosST plastic family N-channel enhancement-mode lateral MOSFETs