Silicon-carbide 1200 V Power MOSFET in an HiP247-4 package


Optimum trade-off between conduction and switching loss

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. SCTWA60N120G2-4 features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Key features

  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitance
  • Very high operating junction temperature capability (TJ = 200 °C)
  • Source sensing pin for increased efficiency

Application examples

ups Switching mode power supply
dc-dc DC-DC converters
industrial motor control Industrial motor control

Recommended resources

Silicon carbide technology enables higher power density in Industrial and Automotive applications

mosfet finder app

A user-friendly product selector ensuring a smooth and simple navigation experience and includes a parametric search engine that lets you rapidly identify the right product that best fits your application. Available on Google Play, App Store and Wandoujia.

Discover ST's portfolio of discrete and integrated power semiconductors as well as application guidelines and designer resources.