Strategic trade-offs improve application design

ST's field-effect rectifier diodes (FERD) help improve designs with new versions focusing on strategic trade-offs. The attention is kept on improving voltage drop and ensuring better safety margins against leakage current-induced runaway.
In function of the targeted application and its voltage, developers can now choose the best compromise for their applications in terms of forward voltage drop (VF) and leakage current (IR).

When ordering, use the following guidelines:
  - ‘U’ optimized for forward voltage drop (VF)
  - ‘M’ optimized for leakage current (IR)
  - ‘H’ low leakage current at high temperatures
  - ‘S’ is a slightly smaller version than the ‘H’ version

A 30 A, 100 V device now fits in a DPAK package!
For a given package size, our advanced FERD technology allows better density and more efficiency than Schottky barrier devices. The most recent 60 and 100V devices are available in through-hole as well as PowerFLAT™, D²PAK and DPAK versions.
Smaller and more optimized packages allow the design of more compact chargers, adapters and SMPS with less power losses, therefore less heat-sinking.

Field-Effect Rectifier Diode portfolio (FERD)

Field-effect rectifier diodes pack efficiency in a DPAK

Manufacturers of SMPS, photovoltaic systems, LED lighting and chargers have already chosen field-effect rectifier diodes (FERD) for their smaller, more efficient power converters. Outperforming Schottky diodes in power density and efficiency they offer a unique trade-off between low forward voltage drop (V F) and low leakage current (I R). Available in 45V to 100 V ratings, FERDs take the lead for newer systems with smaller enclosures serving both stringent environment and form factors.

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