ST's field-effect rectifier diodes (FERD) help improve designs with new versions focusing on strategic trade-offs. The attention is kept on improving voltage drop and ensuring better safety margins against leakage current-induced runaway. In function of the targeted application and its voltage, developers can now choose the best compromise for their applications in terms of forward voltage drop (VF) and leakage current (IR).
When ordering, use the following guidelines: - ‘U’ optimized for forward voltage drop (VF) - ‘M’ optimized for leakage current (IR) - ‘H’ low leakage current at high temperatures - ‘S’ is a slightly smaller version than the ‘H’ version
A 30 A, 100 V device now fits in a DPAK package! For a given package size, our advanced FERD technology allows better density and more efficiency than Schottky barrier devices. The most recent 60 and 100V devices are available in through-hole as well as PowerFLAT™, D²PAK and DPAK versions. Smaller and more optimized packages allow the design of more compact chargers, adapters and SMPS with less power losses, therefore less heat-sinking.