STのシリコン･カーバイド（SiC）ダイオードは、今日の厳しい省エネ規制（Energy Star、80Plus、European Efficiency）に適合しているうえ、標準的なシリコン･ダイオードと比べて15%低い順電圧降下（VF）で4倍優れた動的特性を実現しています。
太陽光発電用インバータやモータ駆動機器、無停電電源、電気自動車用回路の効率と堅牢性は、シリコン･カーバイド（SiC）の利用によって大幅に改善されます。
STは600V～1200V定格でダイオード1素子入りおよび2素子入りの構成を、DPAKからTO-247までのさまざまなパッケージ･サイズで提供しています。パッケージには、セラミックで絶縁されているTO-220や、高電圧（HV）に対応する面実装型（SMD）パッケージの新しい標準である薄型で小型のPowerFLAT 8x8も用意しています。
ビデオ
SiC diodes – compact surface-mount PowerFLAT™ 8x8 HV packages
To help engineers design denser, more efficient power conversion stages, ST's compact surface-mount PowerFLAT™ 8x8 HV devices feature excellent thermal performance. Moreover, ST took a few extra steps to propose a 4 to 8 A range (STPSC4H065DLF, STPSC6H065DLF and STPSC8H065DLF) with super-power density.
- Package less than 1 mm thick
- Forward voltage (VF) improved by 200 mV
- High-voltage creepage: 2.75 mm
- Designed and built for high inrush current (IFSM)
- Rth thermal resistance as low as 1.7°C/W
-
STPSC6H065DLF
6 A, 650 V SiC Power Schottky Diode
-
STPSC4H065DLF
4 A, 650 V SiC Power Schottky Diode
-
STPSC16H065A
650 V, 16 A Single High Surge Silicon Carbide Power Schottky Diode
-
STPSC5H12
1200 V, 5 A High Surge Silicon Carbide Power Schottky Diode
-
STPSC10H12
1200 V, 10 A High Surge Silicon Carbide Power Schottky Diode
-
STPSC2H12
1200 V power Schottky silicon carbide diode
-
STPSC10H12C
1200 V, 10 A dual High Surge Silicon Carbide Power Schottky Diode
-
STPSC12065
650 V power Schottky silicon carbide diode
-
STPSC20065
650 V power Schottky silicon carbide diode
-
STPSC16H065C
650 V power Schottky silicon carbide diode
-
STPSC12H065C
650 V, 12 A dual High Surge Silicon Carbide Power Schottky Diode
-
STPSC6TH13TI
2 x 650V tandem, 6 A High Surge Silicon Carbide Power Schottky Diode
-
STPSC2H065
650 V, 2 A High Surge Silicon Carbide Power Schottky Diode
-
STPSC8H065C
650 V, 8 A dual High Surge Silicon Carbide Power Schottky Diode
-
STPSC8065
650 V power Schottky silicon carbide diode
-
STPSC15H12
1200 V, 15 A High Surge Silicon Carbide Power Schottky Diode
-
STPSC40065C
650 V power Schottky silicon-carbide diode
-
STPSC2006CW
600 V power Schottky silicon-carbide diode
-
STPSC30H12C
1200 V power Schottky silicon carbide diode
-
STPSC20H12C
1200 V, 20 A High surge Silicon Carbide Power Schottky Diode
-
STPSC40H12C
1200 V, 40 A High Surge Silicon Carbide Power Schottky Diode
-
STPSC10065
650 V power Schottky silicon carbide diode
-
STPSC20H12
1200 V, 20 A High surge Silicon Carbide Power Schottky Diode
-
STPSC6H065
650 V, 6 A High Surge Silicon Carbide Power Schottky Diode
-
STPSC20065C
650 V, dual 10 A, power Schottky silicon carbide diode
-
STPSC8H065DLF
8 A 650 V SiC Power Schottky Diode
-
STPSC8TH13TI
2 x 650V tandem, 8 A High Surge Silicon Carbide Power Schottky Diode
-
STPSC20H065C
650 V, 20 A dual High Surge Silicon Carbide Power Schottky Diode
-
STPSC10H065
650 V, 10 A High Surge Silicon Carbide Power Schottky Diode
-
STPSC10TH13TI
2 x 650V tandem, 10 A High Surge Silicon Carbide Power Schottky Diode
-
STPSC8H065
650 V, 8 A High surge Silicon Carbide Power Schottky Diode
-
STPSC6H12
1200 V, 6 A High Surge Silicon Carbide Power Schottky Diode
-
STPSC4H065
650 V, 4 A High Surge Silicon Carbide Power Schottky Diode
-
STPSC12H065
650 V, 12 A High Surge Silicon Carbide Power Schottky Diode
