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This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition systems.
主な特徴
- Designed for automotive applications and AEC-Q101 qualified
- ESD gate-emitter protection
- Gate-collector high voltage clamping
- Logic level gate drive
- Low saturation voltage
- High pulsed current capability
- Gate and gate-emitter resistor
サンプル & 購入
| 製品型番 | パッケージ | 梱包タイプ | 製品ステータス | 概算価格（USS） | Quantity | Eoff (mJ) (typ) (@ Tc = 125 °C) | PTOT (W) (max) | ECCN (US) | Country of Origin | 詳細 | 販売代理店からオーダー | STからオーダー |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STGB20N40LZ | D2PAK | Tape And Reel | Active | 1.05 | 1000 | - | 150 | EAR99 | CHINA | 販売代理店に在庫がない場合は、STのセールスオフィスまでお問い合わせください | 購入 |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
ビデオ
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| 製品型番 | 製品ステータス | パッケージ | グレード | RoHSコンプライアンスグレード | Material Declaration** |
|---|---|---|---|---|---|
| STGB20N40LZ | Active | D2PAK | オートモーティブ | Ecopack1 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
