ST’s MDmesh K5 series feature the industry’s best RDS(on) and figure of merit for increased power density and efficiency in applications such as LED lighting, metering, solar inverters, 3-phase auxiliary power supplies and welding. They are available at 800 V, 850 V, 900 V, 950 V, 1050 V, 1200 V and 1500 V.

Key features and benefits:

  • Industry’s lowest RDS(on) for increased efficiency and more compact designs
  • Industry’s best figure of merit (FoM)

The only 1200 V MOSFETs in Super Junction Technology

The newest STx8N120K5 1200 V, 2 Ohm (max.), 6A MOSFETs complete ST’s portfolio of very-high-voltage MOSFETs fully developed using ST’s proprietary MDmesh™ K5 super-junction technology for an improved power density and higher efficiency. 

Thanks to their very low RDS(on) and best-in-class gate charge (Qg) for ease of use and efficient designs, ST's MDmesh™ K5 MOSFETs are well suited for flyback converters in metering, telecom, on-board charger, and 3-phase auxiliary power supply applications.