This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
Discover the MDmesh™ K5 Series of VHV MOSFETs (800 V - 1700 V), developed using ST's proprietary super-junction technology.
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産業用電源 / 産業用装置
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