N-channel 600 V, 0.278 Ohm typ., 11 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package

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  • This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

    主な特徴

    • Extremely low gate charge
    • Excellent output capacitance (COSS) profile
    • 100% avalanche tested
    • Zener-protected

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STL19N60M2 PowerFLAT 8x8 HV Tape And Reel
Active
1.48 1000 EAR99 CHINA Check Availability

Distributor availability ofSTL19N60M2

代理店名
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ARROW EUROPE 3000 0 Order Now
MOUSER WORLDWIDE 100 1 Order Now
Farnell Element14 EUROPE 3000 1 Order Now

代理店レポートによる在庫データ: 2019-05-22

代理店名

ARROW

在庫

3000

Min.Order

0

地域

EUROPE Order Now

MOUSER

在庫

100

Min.Order

1

地域

WORLDWIDE Order Now

Farnell Element14

在庫

3000

Min.Order

1

地域

EUROPE Order Now

代理店レポートによる在庫データ: 2019-05-22

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STL19N60M2

パッケージ

PowerFLAT 8x8 HV

Packing Type

Tape And Reel

Unit Price (US$)

1.48*

Distributor availability ofSTL19N60M2

代理店名
地域 在庫 最小発注 Third party link
ARROW EUROPE 3000 0 Order Now
MOUSER WORLDWIDE 100 1 Order Now
Farnell Element14 EUROPE 3000 1 Order Now

代理店レポートによる在庫データ: 2019-05-22

代理店名

ARROW

在庫

3000

Min.Order

0

地域

EUROPE Order Now

MOUSER

在庫

100

Min.Order

1

地域

WORLDWIDE Order Now

Farnell Element14

在庫

3000

Min.Order

1

地域

EUROPE Order Now

代理店レポートによる在庫データ: 2019-05-22

Marketing Status

Active

Unit Price (US$)

1.48

数量

1000

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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関連アプリケーション

開発ツール・ハードウェア

    • 製品型番

      MOSFET product finder application for Android and iOS

00 Files selected for download

技術文書

    • Description バージョン サイズ アクション
      DS11488
      N-channel 600 V, 0.278 Ω typ., 11 A MDmesh™ M2 Power MOSFET in a PowerFLAT™ 8x8 HV package
      2.0
      629.81 KB
      PDF
      DS11488

      N-channel 600 V, 0.278 Ω typ., 11 A MDmesh™ M2 Power MOSFET in a PowerFLAT™ 8x8 HV package

    • Description バージョン サイズ アクション
      AN4250
      Fishbone diagram for power factor correction
      1.1
      772.32 KB
      PDF
      AN4829
      Fishbone diagrams for a forward converter
      1.1
      1.35 MB
      PDF
      AN4720
      Half bridge resonant LLC converters and primary side MOSFET selection
      1.0
      1.4 MB
      PDF
      AN4742
      MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology
      1.0
      1.29 MB
      PDF
      AN4406
      MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies
      1.0
      652.78 KB
      PDF
      AN2842
      Paralleling of power MOSFETs in PFC topology
      1.4
      896.91 KB
      PDF
      AN2344
      Power MOSFET avalanche characteristics and ratings
      1.3
      880.04 KB
      PDF
      AN5318
      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies
      1.0
      1.09 MB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN4250

      Fishbone diagram for power factor correction

      AN4829

      Fishbone diagrams for a forward converter

      AN4720

      Half bridge resonant LLC converters and primary side MOSFET selection

      AN4742

      MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology

      AN4406

      MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

      Power MOSFET avalanche characteristics and ratings

      AN5318

      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • Description バージョン サイズ アクション
      TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
      1.0
      657.71 KB
      PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

    • Description バージョン サイズ アクション
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

HW Model, CAD Libraries & SVD

    • Description バージョン サイズ アクション
      STL19N60M2 PSpice model 1.0
      9.68 KB
      ZIP

      STL19N60M2 PSpice model

Publications and Collaterals

    • Description バージョン サイズ アクション
      500-650 V MDmesh™ M2: The New ST’s High Voltage Super-junction MOSFET Series 1.0
      720.83 KB
      PDF
      600-650 V MDmesh™ M2: The ST’s new Super-junction HV MOSFET series 1.0
      671.31 KB
      PDF

      500-650 V MDmesh™ M2: The New ST’s High Voltage Super-junction MOSFET Series

      600-650 V MDmesh™ M2: The ST’s new Super-junction HV MOSFET series

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      パワー・マネージメントガイド 2017 09.2018
      2.64 MB
      PDF
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      パワー・マネージメントガイド 2017

      Electric vehicle (EV) ecosystem

製品型番 Marketing Status パッケージ Grade RoHS Compliance Grade Material Declaration**
STL19N60M2
Active
PowerFLAT 8x8 HV インダストリアル Ecopack2

STL19N60M2

Package:

PowerFLAT 8x8 HV

Material Declaration**:

PDF XML

Marketing Status

Active

Package

PowerFLAT 8x8 HV

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.