This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- 100% avalanche tested
Recommended for you
産業用電源 / 産業用装置
|製品型番||Marketing Status||パッケージ||Grade||RoHS Compliance Grade||Material Declaration**|
|PowerFLAT 8x8 HV||インダストリアル||Ecopack2|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.