Based on the advanced and innovative properties of wide bandgap materials, ST’s 650 V and 1200 V silicon carbide (SiC) MOSFETs feature very low RDS(on) * area combined with excellent switching performance, translating into more efficient and compact systems. Compared with silicon MOSFETs, SiC MOSFETs exhibit low on-state resistance * area even at high temperatures and excellent switching performances versus the best-in-class IGBTs in all temperature ranges, simplifying the thermal design of power electronic systems.

The main features and benefits of our SiC MOSFETs include:

  • Very high temperature handling capability (Tj max = 200 °C) leading to reduced PCB form factors (simplified thermal management) as well as improved system reliability
  • Significantly reduced switching losses (minimal variation versus temperature) resulting in more compact designs (with smaller passive components)
  • Low on-state resistance (20 mΩ typ @ 25 °C for 650 V device and 80 mΩ typ @ 25 °C for 1200 V device) resulting in higher system efficiency (reduced cooling requirements)
  • Simple to drive (cost-effective network driving)
  • Very fast and robust intrinsic body diode (no need for external freewheeling diode, thus more compact systems)

650 V, 90 A, 18 mΩ silicon-carbide power MOSFET in H2PAK SMD and HiP247 packages

ST has extended its offering of SiC MOSFETs with the introduction of a 650 V, 90 A power MOSFET in high-performance H2PAK SMD and HiP247 packages offering a very high operating junction temperature capability (TJ = 175 °C).

The SCTH90N65G2V-7 and SCTW90N65G2V can manage high breakdown voltages with extremely low gate charge and input capacitances with remarkably low on-resistance per unit area and very good switching performance.

New 650 V, 22 mΩ typ (at 150 °C) SiC power MOSFET

ST has extended its portfolio of SiC MOSFETs with the introduction of the 22 mΩ typ (at 150 °C), 650 V SCTW100N65G2AG which increases the electrical efficiency of EVs and hybrid vehicles. When used in the EV/HEV main inverter, it increases the efficiency by up to 3% compared with an equivalent IGBT solution, translating into longer battery life and a lighter power unit. ST’s SiC MOSFETs also feature the industry’s highest junction-temperature rating of 200°C and show a very small variation of the on-state resistance even at high temperatures. This leads to higher system efficiency, which reduces cooling requirements and PCB form factors simplifying thermal management.
The new 650 V SiC MOSFET is currently sampling to lead customers and will soon complete the qualification to AEC-Q101.