Based on the advanced and innovative properties of wide bandgap materials, ST’s 650 V and 1200 V silicon carbide (SiC) MOSFETs feature very low RDS(on) * area combined with excellent switching performance, translating into more efficient and compact systems. Compared with silicon MOSFETs, SiC MOSFETs exhibit low on-state resistance * area even at high temperatures and excellent switching performances versus the best-in-class IGBTs in all temperature ranges, simplifying the thermal design of power electronic systems.
The main features and benefits of our SiC MOSFETs include:
- Very high temperature handling capability (Tj max = 200 °C) leading to reduced PCB form factors (simplified thermal management) as well as improved system reliability
- Significantly reduced switching losses (minimal variation versus temperature) resulting in more compact designs (with smaller passive components)
- Low on-state resistance (20 mΩ typ @ 25 °C for 650 V device and 80 mΩ typ @ 25 °C for 1200 V device) resulting in higher system efficiency (reduced cooling requirements)
- Simple to drive (cost-effective network driving)
- Very fast and robust intrinsic body diode (no need for external freewheeling diode, thus more compact systems)
650 V, 90 A, 18 mΩ silicon-carbide power MOSFET in H2PAK SMD and HiP247 packages
ST has extended its offering of SiC MOSFETs with the introduction of a 650 V, 90 A power MOSFET in high-performance H2PAK SMD and HiP247 packages offering a very high operating junction temperature capability (TJ = 175 °C).
The SCTH90N65G2V-7 and SCTW90N65G2V can manage high breakdown voltages with extremely low gate charge and input capacitances with remarkably low on-resistance per unit area and very good switching performance.
New 650 V, 22 mΩ typ (at 150 °C) SiC power MOSFET
The new 650 V SiC MOSFET is currently sampling to lead customers and will soon complete the qualification to AEC-Q101.