The workshop is jointly organized by STMicroelectronics and the Institute for Microelectronics and Microsystems of the Italian National Research Council (IMM-CNR). It represents a melting point between the academic and research world and the industrial development in the field of the structural characterization and the microanalysis by electron microscopy. 

The scope of the event will be focused on new methods applied to semiconductor devices (silicon based, wide band gap, metallic interconnections, nanotechnology, etc) and materials science. It will highlight recent progress in instrumentation, in chemical and structural analysis, in sample preparation by mechanical thinning and by FIB, as well as in situ devices polarization dependent analyses.
 

The scientific program will be opened by a lectio magistralis delivered by Prof. Giulio Pozzi (Phys. Dep. of Bologna University) regarding Electron Holography: from the beginning to recent developments. The session will continue with scientific presentations given by researchers coming from STMicroelectronics, IMM-CNR, ENEA, LETI CEA, CNRS-CEMES and Companies specialized in electron microscopy. 

 

The workshop will present new insights focusing on the following topics:

  • TEM: Advanced Structural Characterization (STEM, nBED, Holodark, Tomography, ASTAR, …) and related  Spectroscopic Techniques  (EELS, EDS)
  • SEM: Advanced Characterization  (EBIC, Voltage Contrast, EDS, …)
  • Novel specimen preparation techniques by FIB
  • Materials: SiC, GaN, Phase Change  Materials, Metal Alloys, ...
  • Latest company products: Helium Ion Microscope, New generation of  (S)TEM and FIB, Highly controlled mechanical specimen preparation,...

Download the workshop flyer here!


There is no charge to participate in this event, but you must register through my.st.com.

 

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General Chairs

Simona Boninelli (CNR-IMM, Catania, Italy) and Domenico Mello (STMicroelectronics,CTM Ph.Lab, Catania, Italy)
 

Agenda

Time Topic Speaker
07:45 - 08:45 Registration and breakfast
09:00 - 09:20 Welcome from Catania Manufacturing F. Caizzone, STMicroelectronics  Catania
09:20 - 09:40 Welcome from CNR-IMM C. Spinella, DSFTM-CNR
09:40 - 10:15 Lectio Magistralis – Electron holography: past, present and future G. Pozzi, University of Bologna and Ernst Ruska-Centre Jülich
10:15 - 10:35 Hitachi solutions from sample preparation to analysis S. Juergen, Hitachi
10:35 - 10:50 Coffee Break
10:50 - 11:10 Defects characterization of ion implanted P doped 4H-SiC S. Boninelli, CNR-IMM Catania
11:10 - 11:30 Low KV STEM on thick samples F. Cazzaniga, STMicroelectronics Agrate
11:30 - 11:50 Advances in Dualbeam Automation for Sample Preparation and System Maintenance D. Donnet, Thermo Fisher Scientific
11:50 - 12:10 Scanning Electron Microscopy techniques for technological applications V. Morandi, CNR-IMM Bologna
12:10 - 12:30 Advanced TEM characterization for 28nm Phase Change Memory devices (STEM imaging, EDX & ASTAR techniques) L. Clement and A. Valery, ST Crolles
12:30 - 12:50 Failure analysis in the semiconductor devices R. Vana, Tescan
12:50 - 13:10 Quantitative EDS analysis in transmission electron microscopy using unconventional reference materials M. Nacucchi , ENEA Brindisi
13:10 - 14:30 Lunch
14:30 - 14:50 TEM EDS and AES quantitative analysis of Ni segregation in metal layers D. Mello, STMicroelectronics Catania
14:50 - 15:10 Challenge Beyond the nanoscale at the Sub-A electron microscopy lab of CNR-IMM G. Nicotra. CNR-IMM Catania
15:10 - 15:30 High resolution Materials Characterization with He and Ne Beams P. Gnauck, Zeiss
15:30 - 15:50 The Helium Ion Microscopy: some experimental results to disclose nanostructures M. Re, ENEA Brindisi
15:50 - 16:10 SiC-SiO2 interface at the atomic scale C. Bongiorno, CNR-IMM Catania
16:10 - 16:30 Coffee Break
16:30 - 16:50 2D & 3D advanced Transmission Electron Microscopy for semiconductor characterization N. Bernier, Leti CEA Grenoble
16:50 - 17:10 Measuring lattice strain in semiconductors with the TEM: a short review R. Balboni, CNR-IMM Bologna
17:10 - 17:30 Leica Workflow for EM sample preparation with Ion Millin S. Sevillano, Leica
17:30 - 17:50 STEM EELS study of Ge rich GeSbTe thin film for memory applications M. Scuderi, CNR-IMM Catania
17:50 - 18:10 Advanced TEM studies of the crystallization process in Ge-rich phase change materials for future memory devices M. Agati, CNRS-CEMES  Toulouse
18:10 - 18:30  State of the art in the preparation of samples and innovative techniques M. Fedele 2MStrumenti, Roma

 

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