The 650V/600V STPOWER MDmesh™ M9 and DM9 series provide the best FOM R_DS(on)*Q_g currently available in the market. This results in an increased power density and more compact system solutions getting this result in two ways, providing:
- a smaller R_DS(on) coupled with lower Q_g in a fixed package vs previous technologies, 
- or the same R_DS(on) coupled with lower Q_g in a smaller package vs previous technologies.

These 600/650V devices are ideal for switched-mode power supplies (SMPS) in applications from data-center servers and 5G power stations to renewable energy and EV charging systems, all of which actively demand higher power density in more compact and efficient systems with improved thermal capabilities. The even lower drain-source on-resistance and improved gate charge mean that the MDmesh M9/DM9 series MOSFETs in surface mounted TO-LL and PowerFLAT packages are among the highest performing silicon devices available for high-power-density applications like resonant converters, and the DM9 series with fast intrinsic diode improves ruggedness and reliability against fast voltage transients.

Specific to MDmesh M9 series

• Lowest Q_g
• Higher reverse diode dv/dt and MOSFET dv/dt ruggedness
• Higher power levels
• Increased power density and lower conduction losses
• High efficiency and low switching power losses
• High switching speed
• Increased robustness and reliability for more compact design

Specific to MDmesh DM9 series

• Improved intrinsic diode reverse recovery time (trr)
• Higher dv/dt (120 V/ns) and di/dt capability (1300 A/µs)
• Optimized body diode recovery phase and softness
• Isolation rating of 2500 V_rms/min

250-600-650V MDmesh M9: superjunction power MOSFETs for best efficiency
Flyer

Industry’s best figure of merit (R_DS(on) x Q_g) enables increased power levels and higher power density for more compact solutions.

600-650V MDmesh DM9: fast-recovery SJ power MOSFETs boost efficiency and robustness
Flyer

New silicon SJ MOSFET series with a fast intrinsic body diode offers impressive efficiency and reliability for full-bridge phase-shifted ZVS topologies.

Irradiated HV Power MOSFETs working in linear zone: a comparison of electro-thermal behavior with standard HV products
Technical note

This paper studies the thermal instability phenomenon of irradiated HV Power MOSFET devices working in linear zone operating conditions and compares their electro-thermal behavior with standard products. Experimental results show that irradiated devices have more thermal instability than standard devices, therefore, they should be used carefully in these particular operating conditions.

Digital Power Guide
Brochure

This brochure descibes the extensive ST digital power portfolio including power discretes addressing both soft-switching resonant and hard-switching converters that maximize system efficiency for high-power applications.

Power Management Guide
Brochure

The technological innovation, which persists at the core of ST strategy for more than 30 years, is the reason why ST today can offer an extensive range of cuttingedge products for power and energy management...

ST launches new MDmesh MOSFETs, raising power density and efficiency
Press announcement

STMicroelectronics’ STPOWER MDmesh M9 and DM9 N-channel superjunction multi-drain silicon power MOSFETs are ideal for switched-mode power supplies (SMPS) in applications from data-center servers and 5G infrastructure to flat-panel televisions...