IEDM 2023

Dec. 9-13 in San Francisco, US

Live sessions. 3 paper presentations.

Sustainability. 2 invited talks.

Network. 1 paper in cooperation with CEA-Leti.

Discover the latest trends in nanometer-scale technology with ST experts.

Advancements in semiconductor and electronic device technology

Join ST at the 69th edition of the IEEE International Electron Devices Meeting (IEDM) 2023.

IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation.

Presentations

ST speakers

12

December

2:15 PM

3 hours

Technical Session 12 December at 2:15 PM | 3 hours Andrea Redaelli (Session Chair)

RRAM and OTS selected crossbar arrays

12

December

9:00 AM

30 min

Invited talk 12 December at 9:00 AM | 30 min Sara Pellegrini

Simulation in action: the application of modelling to SPAD architecture design

13

December

9:00 AM

3 hours

Technical Session 13 December at 9:00 AM | 3 hours Pascal Chevalier (Session Chair)

High frequency and cryogenic RF devices

13

December

9:00 AM

30 min

Paper presentation 13 December at 9:00 AM | 30 min Jean Michailos (ST co-author, presented by CEA-Leti)

3D sequential integration with Si CMOS stacked on 28nm industrial FDSOI with Cu-ULK iBEOL featuring RO and HDR pixel

13

December

9:05 AM

30 min

Paper presentation 13 December at 9:05 AM | 30 min Owen Gauthier

Variability of trap-induced mobility fluctuations in nanoscale bulk and FD-SOI MOSFETs

13

December

9:30 AM

30 min

Paper presentation 13 December at 9:30 AM | 30 min Jasmina Antonijevic, Sébastien Crémer, Vincent Knopik, Jérémie Forest, Nathalie Revil, Philippe Cathelin, Pascal Chevalier, David Roy (ST co-authors)

A cost effective RF-SOI drain extended MOS transistor featuring PSAT=19dBm @28GHz & VDD=3V for 5G Power Amplifier application

13

December

9:55 AM

30 min

Paper presentation 13 December at 9:55 AM | 30 min J-D Chapon, S. Guglieri, F. Bailly, P. Toresani, L-L. Chapelon, Andreia Cathelin, Jean Michailos, Franck Arnaud (ST co-authors)

3D sequential integration with Si CMOS stacked on 28nm industrial FDSOI with Cu-ULK iBEOL featuring RO and HDR pixel

13

December

1:30 PM

30 min

Paper presentation 13 December at 1:30 PM | 30 min Pierre Malinge

2.16µm back side illuminated voltage domain global shutter CMOS image sensor with single silicon layer pixel

13

December

9:00 AM

30 min

Invited talk 13 December at 9:00 AM | 30 min Serge Nicoleau, Group Vice-President Technology

Developing sustainable technologies for a more sustainable future

Register for IEDM 2023

Join ST experts at IEDM 2023 for breakthroughs in the areas of semiconductor and electronic device technology!

时间

Dec 9 - 13, 2023

地点

San Francisco, US
Register now
Hilton San Francisco Union Square

O'Farrell Street, San Francisco, CA, US

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Register for IEDM 2023

Join ST experts at IEDM 2023 for breakthroughs in the areas of semiconductor and electronic device technology!

Dec 9 - 13, 2023

San Francisco, US

Map Register now