On-demand Webinar | 3.6 kW SiC MOSFET bridgeless totem pole PFC with SCR inrush current limiter
Reference design board for a compact, 3.6 kW turnkey power factor corrector...
Designing smaller and lighter AC-DC power converters with higher input power factor (PF) and lower harmonic distortion THD is a major challenge for developers who are often pressured by time and budget constraints.
We show how you can significantly cut time-to-market by implementing an effective and efficient totem pole PFC solution with highly responsive digital inrush current control, using SiC MOSFETs and SCRs.
This on-demand webinar demonstrates how our STEVAL-DPSTPFC1 reference board with turnkey bridgeless totem pole boost circuitry can help you meet and exceed today’s efficiency and performance requirements for an AC-DC power factor corrector up to 3.6 kW. This digitally controlled bridgeless totem pole PFC with inrush current limitation delivers 97.5% full system peak efficiency and CISPR 5022 EMI compliance in a robust (4 kV surge voltage tolerance) and compact design based on SCR thyristors, SiC MOSFET, isolated drivers and the STM32 microcontroller.
- High power switched-mode power supplies (SMPS)
- EV charging stations
- Motor drives
This webinar will guide you through:
- Target applications and markets
- STEVAL-DPSPFC-1 solution overview
- Totem pole topology operation
- Inrush current limitation with SCR
- STEVAL-DPSPFC-1 reference design performance
- Key power products:
- SiC MOSFET
- Isolated Gate Drivers STGAP
- Auxiliary SMPS – Viper family
The recording includes the Q&A session, when our expert answered various interesting questions from the audience. We think may be of interest to you.
Ales Loidl heads the Power & Energy Application Lab in Prague, covering auxiliary power supplies ranging from a few watts to tens of kilowatts for solar and fast EV chargers. Ales has accumulated more than 17 years’ experience and has registered several patents, and today is focusing on components and applications based on wide-bandgap SiC and GaN materials.