White paper | Benefits of using our wide bandgap technology


Power electronics designers have been waiting for breakthrough technologies to reshuffle circuit topologies and boost efficiency in energy conversion systems. SiC technology perfectly matches these expectations, and GaN is quite promising...
 
In this whitepaper, on top of insights on both SiC and GaN, get a true feedback about which application types and conditions it makes sense to use SiC MOSFETs rather than traditional silicon devices in terms of performance and cost-effectiveness.
 
It covers the following topics:
  • How the advent of silicon carbide paves the way for large-scale adoption of wide bandgap semiconductors
  • Benefits of SiC MOSFETs and GaN HEMTs in various applications
  • Planar versus Trench technologies: the SiC MOSFET roadmap
  • Design advantages of using SiC MOSFETs 
  • Benefits of using GaN devices and their future potential
     

 

ST produces SiC MOSFETs and diodes in very large volumes suiting a large spectrum of applications. We are partnering with many customers to contribute to development of their future applications, offering clear answers and sharing insights about the significant potential for innovation of our SiC and GaN devices in power electronics.

 

ST将保留您的浏览记录,并使用您以前访问、购买或下载过的产品和服务的详细信息,为您提供ST认为您也会感兴趣的其他产品和服务建议。
ST使用您直接提供的个人数据以及您在ST网站上的活动,并根据隐私政策向您发送(直接或通过ST分公司或分销商)有关ST产品和服务的电子报、广告或其他特定和有针对性的营销材料。您的个人资料将提供给位于欧盟和欧盟以外国家的ST分公司和分销商。您可以在我们网站的隐私政策中查阅ST分公司和分销商的列表。为了向您发送特定且有针对性的营销材料,我们会基于您直接向ST和/或通过您在ST网站上的活动提供的信息,或ST在其他情况下从您获得的其他信息进行综合分析(例如,如果您与ST、其分公司或分销商建立业务关系)。