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To meet the latest stringent efficiency regulations (Energy Star, 80Plus, European Efficiency), power-supply designers must consider the use of new power converter topologies and more efficient electronic components such as high-voltage silicon-carbide (SiC) Schottky rectifiers.
ST’s SiC diodes take advantage of silicon carbide’s superior physical characteristics over Si, with 4 times better dynamic characteristics and 15% less forward voltage, VF.

In hard-switching applications such as high-end-server and telecom power supplies, SiC Schottky diodes show a significant power-loss reduction and are commonly used. They are also increasingly being used in solar inverters, motor drives, uninterruptible power supplies (UPS) and electrical vehicle (EV) applications.

ST now provides a full family of SiC diodes, ranging from 600 V to 1200 V including single and dual diodes. These products are available in a variety of packages from DPAK to TO-247, including insulated TO-220AB/AC, and offer great flexibility to designers looking for efficiency, robustness, and reduced time to market and cost.


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SiC diodes – compact surface-mount PowerFLAT™ 8x8 HV packages

To help engineers design denser, more efficient power conversion stages, ST's compact surface-mount PowerFLAT™ 8x8 HV devices feature excellent thermal performance. Moreover, ST took a few extra steps to propose a 4 to 8 A range (STPSC4H065DLF, STPSC6H065DLF and STPSC8H065DLF) with super-power density.

  • Package less than 1 mm thick
  • Forward voltage (VF) improved by 200 mV
  • High-voltage creepage: 2.75 mm
  • Designed and built for high inrush current (IFSM)
  • Rth thermal resistance as low as 1.7°C/W

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